| PART |
Description |
Maker |
| KMM5321204C2W KMM5321204C2WG |
1Mx32 DRAM SIMM (1MX16 Base)
|
Samsung semiconductor
|
| KMM5362203C2W |
2Mx36 DRAM Simm Using 1Mx16 And 1Mx4 Quad Cas
|
Samsung Semiconductor
|
| KMM5362203C2WG KMM5362203C2W |
2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| AEPDH1M8LB-12 AEPDS1M8LB-85P AEPDH1M8LB-10P AEPDH1 |
1M X 8 MULTI DEVICE DRAM MODULE, 120 ns, SMA28 SIMM-28
1M X 8 MULTI DEVICE DRAM MODULE, 85 ns, SMA28 SIMM-28
1M X 8 MULTI DEVICE DRAM MODULE, 100 ns, SMA28 SIMM-28
|
Fox Electronics
|
| KMM5364003CKG KMM5364103CK KMM5364103CKG KMM536400 |
4M X 36 FAST PAGE DRAM MODULE, 50 ns, SMA72
4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V 4米36的DRAM上海药物研究所利用4Mx46M四中科院K/2K刷新V
|
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM53216004BK |
16MBx32 DRAM Simm Using 16MBx4
|
Samsung Semiconductor
|
| KMM5362000B2 KMM5362000B2G |
2M x 36 DRAM SIMM Memory Module
|
Samsung Electronics
|
| KMM5324004BSW |
4MBx32 DRAM Simm Using 4MBx16
|
Samsung Semiconductor
|
| KMM5362003 KMM5362003G |
2M x 36 DRAM SIMM Memory Module
|
Samsung Electronics
|
| KMM53216000BK |
16MBx32 DRAM Simm Using 16MBx4
|
Samsung Semiconductor
|
| KMM5324004BSWG KMM5324004BSW |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM53632000BK |
32MBx36 DRAM Simm Using 16MBx4 & 16MBx1
|
Samsung Semiconductor
|
